Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
文件核验信息(付费前可核对)
标准范围(官方英文摘要)
IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test resul
标准信息
- 标准号
- IEC 60749-28:2022
- 英文标题
- Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
- 发布单位
- —
- 技术委员会
- TC 47
- 版本 / 版次
- 2.0
- 状态
- 现行
- 发布日期
- 2022
- ICS 分类
- 31.080.01 半导体分立器件综合
- 页数
- 98 页
- 官方定价
- CHF 270
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