Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures
文件核验信息(付费前可核对)
标准范围(官方英文摘要)
IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
标准信息
- 标准号
- IEC 62047-47:2024
- 英文标题
- Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures
- 发布单位
- —
- 技术委员会
- TC 47/SC 47F
- 版本 / 版次
- 1.0
- 状态
- 现行
- 发布日期
- 2024
- ICS 分类
- 31.080.99 其他半导体分立器件
- 页数
- 16 页
- 官方定价
- CHF 80
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