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IEC 62047-19:2013
Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
现行 ICS 31 电子学 2013 60 页 ¥3
IEC 62047-1:2016
Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
现行 ICS 31 电子学 2016 66 页 ¥5
IEC 62047-20:2014
Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
现行 ICS 31 电子学 2014 108 页 ¥5
IEC 62047-21:2014
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
现行 ICS 31 电子学 2014 26 页 ¥2
IEC 62047-22:2014
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
现行 ICS 31 电子学 2014 20 页 ¥1
IEC 62047-25:2016
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
现行 ICS 31 电子学 2016 45 页 ¥3
IEC 62047-26:2016
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
现行 ICS 31 电子学 2016 57 页 ¥3
IEC 62047-27:2017
Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)
现行 ICS 31 电子学 2017 16 页 ¥1
IEC 62047-28:2017
Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices
现行 ICS 31 电子学 2017 17 页 ¥1
IEC 62047-29:2017
Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
现行 ICS 31 电子学 2017 12 页 ¥1
IEC 62047-2:2006
Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
现行 ICS 31 电子学 2006 25 页 ¥2
IEC 62047-30:2017
Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
现行 ICS 31 电子学 2017 20 页 ¥1
IEC 62047-31:2019
Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
现行 ICS 31 电子学 2019 12 页 ¥1
IEC 62047-32:2019
Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators
现行 ICS 31 电子学 2019 37 页 ¥2
IEC 62047-33:2019
Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device
现行 ICS 31 电子学 2019 24 页 ¥2
IEC 62047-34:2019
Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer
现行 ICS 31 电子学 2019 16 页 ¥1
IEC 62047-35:2019
Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices
现行 ICS 31 电子学 2019 41 页 ¥3
IEC 62047-36:2019
Semiconductor devices – Micro-electromechanical devices – Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films
现行 ICS 31 电子学 2019 16 页 ¥1
IEC 62047-37:2020
Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application
现行 ICS 31 电子学 2020 34 页 ¥2
IEC 62047-38:2021
Semiconductor devices - Micro-electromechanical devices - Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection
现行 ICS 31 电子学 2021 12 页 ¥1