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IEC 62047-19:2013
Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
现行
ICS 31 电子学
2013
60 页
¥3
IEC 62047-1:2016
Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
现行
ICS 31 电子学
2016
66 页
¥5
IEC 62047-20:2014
Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
现行
ICS 31 电子学
2014
108 页
¥5
IEC 62047-21:2014
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
现行
ICS 31 电子学
2014
26 页
¥2
IEC 62047-22:2014
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
现行
ICS 31 电子学
2014
20 页
¥1
IEC 62047-25:2016
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
现行
ICS 31 电子学
2016
45 页
¥3
IEC 62047-26:2016
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
现行
ICS 31 电子学
2016
57 页
¥3
IEC 62047-27:2017
Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)
现行
ICS 31 电子学
2017
16 页
¥1
IEC 62047-28:2017
Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices
现行
ICS 31 电子学
2017
17 页
¥1
IEC 62047-29:2017
Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
现行
ICS 31 电子学
2017
12 页
¥1
IEC 62047-2:2006
Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
现行
ICS 31 电子学
2006
25 页
¥2
IEC 62047-30:2017
Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
现行
ICS 31 电子学
2017
20 页
¥1
IEC 62047-31:2019
Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
现行
ICS 31 电子学
2019
12 页
¥1
IEC 62047-32:2019
Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators
现行
ICS 31 电子学
2019
37 页
¥2
IEC 62047-33:2019
Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device
现行
ICS 31 电子学
2019
24 页
¥2
IEC 62047-34:2019
Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer
现行
ICS 31 电子学
2019
16 页
¥1
IEC 62047-35:2019
Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices
现行
ICS 31 电子学
2019
41 页
¥3
IEC 62047-36:2019
Semiconductor devices – Micro-electromechanical devices – Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films
现行
ICS 31 电子学
2019
16 页
¥1
IEC 62047-37:2020
Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application
现行
ICS 31 电子学
2020
34 页
¥2
IEC 62047-38:2021
Semiconductor devices - Micro-electromechanical devices - Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection
现行
ICS 31 电子学
2021
12 页
¥1