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Home and Building Electronic Systems (HBES) and Building Automation and Control Systems (BACS) - Part 5-3: EMC requirements for HBES/BACS used in industrial environments

Home and building electronic systems (HBES) and building automation and control systems (BACS) - Part 6: Requirements for planning and installation

Ultrasonics - Non-focusing short pressure pulse sources including ballistic pressure pulse sources - Characteristics of fields

Nuclear power plants - Electrical power system - General requirements

Corrigendum 1 - Nuclear instrumentation - Data format for list mode digital data acquisition used in radiation detection and measurement

Mobile remotely controlled systems (MRCSs) for nuclear and radiological applications - Part 1: Particular requirements for ground surveillance

Mobile remotely controlled systems (MRCSs) for nuclear and radiological applications - Part 2: Particular requirements for aerial surveillance

Mobile remotely controlled systems for nuclear and radiological applications - General requirements

Corrigendum 1 - Power frequency overvoltage protective devices (POPs) for household and similar applications

Format for LSI-Package-Board Interoperable design

Corrigendum 1 - Secondary cells and batteries containing alkaline or other non-acid electrolytes - Safety requirements for secondary lithium cells and batteries for use in electrical energy storage systems

Secondary cells and batteries containing alkaline or other non-acid electrolytes - Safety requirements for secondary lithium batteries for use in road vehicles not for the propulsion

Low-voltage docking connectors for removable energy storage units

Electrical installations for lighting and beaconing of aerodromes - Connecting devices - General requirements and tests

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Dedicated radionuclide imaging devices - Characteristics and test conditions - Part 1: Cardiac SPECT

Superconducting AC power cables and their accessories for rated voltages from 6 kV to 500 kV - Test methods and requirements