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IEC 60747-19-1:2019
Semiconductor devices – Part 19-1: Smart sensors – Control scheme of smart sensors
现行
ICS 31 电子学
2019
21 页
¥2
IEC 60747-2-2:1993
Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
被代替
ICS 31 电子学
1993
31 页
¥2
IEC 60747-2:2016
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
现行
ICS 31 电子学
2016
91 页
¥5
IEC 60747-2:2025
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
现行
ICS 31 电子学
2025
50 页
¥3
IEC 60747-3:2013
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
现行
ICS 31 电子学
2013
69 页
¥5
IEC 60747-5-10:2019
Semiconductor devices - Part 5-10: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the room-temperature reference point
现行
ICS 31 电子学
2019
16 页
¥1
IEC 60747-5-11:2019
Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
现行
ICS 31 电子学
2019
13 页
¥1
IEC 60747-5-13:2021
Semiconductor devices - Part 5-13: Optoelectronic devices - Hydrogen sulphide corrosion test for LED packages
现行
ICS 31 电子学
2021
19 页
¥1
IEC 60747-5-14:2022
Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
现行
ICS 31 电子学
2022
21 页
¥2
IEC 60747-5-15:2022
Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
现行
ICS 31 电子学
2022
14 页
¥1
IEC 60747-5-16:2023
Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
现行
ICS 31 电子学
2023
17 页
¥1
IEC 60747-5-18:2026
Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method of the macro photoluminescence for epitaxial wafers of micro light emitting diodes
现行
ICS 31 电子学
2026
17 页
¥1
IEC 60747-5-4:2022
Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
现行
ICS 31 电子学
2022
33 页
¥2
IEC 60747-5-5:2020
Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
现行
ICS 31 电子学
2020
52 页
¥3
IEC 60747-5-6:2021 RLV
Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
现行
ICS 31 电子学
2021
198 页
¥5
IEC 60747-5-7:2016
Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
现行
ICS 31 电子学
2016
46 页
¥3
IEC 60747-5-8:2019
Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
现行
ICS 31 电子学
2019
36 页
¥2
IEC 60747-5-9:2019
Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
现行
ICS 31 电子学
2019
19 页
¥1
IEC 60747-6:2025
Semiconductor devices - Part 6: Discrete devices - Thyristors
现行
ICS 31 电子学
2025
138 页
¥5
IEC 60747-7:2010+AMD1:2019 CSV
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
现行
ICS 31 电子学
2010
418 页
¥5