标准检索

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications

Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Semiconductor devices - Integrated circuits - Part 11-1: Internal visual examination for semiconductor integrated circuits excluding hybrid circuits

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 10: Blank detail specification for integrated circuit dynamic read/write memories

Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit, electrically erasable, and programmable read-only memory

Semiconductor devices - Integrated circuits - Part 2-1: Digital integrated circuits - Blank detail specification for bipolar monolithic digital integrated circuit gates (excluding uncommitted logic arrays)

Semiconductor devices - Integrated circuits - Part 2-20: Digital integrated circuits - Family specification - Low voltage integrated circuits

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section four: Family specification for complementary MOS digital integrated circuits, series 4000 B and 4000 UB

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section five: Blank detail specification for complementary MOS digital integrated circuits (series 4000 B and 4000 UB)

Semiconductor devices. Integrated circuits - Part 2: Digital integrated circuits - Section seven: Blank detail specification for integrated circuit fusible-link programmable bipolar read-only memories

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section Eight: Blank detail specification for integrated circuit static read/write memories

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 9: Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories

Semiconductor devices - Integrated circuits - Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits - Section 1: Requirements for internal visual examination

Semiconductor devices - Integrated circuits - Part 21-1: Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of qualification approval procedures

Semiconductor devices - Integrated circuits - Part 21: Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of qualification approval procedures

Semiconductor devices - Integrated circuits - Part 22-1: Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the capability approval procedures

Semiconductor devices - Integrated circuits - Part 22: Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of the capability approval procedures